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PRELIMINARY LH5324P00A FEATURES * 3,145,728 words x 8 bit organization (Byte mode) 1,572,864 words x 16 bit organization (Word mode) * Access time: 120 ns (MAX.) * Power consumption: Operating: 440 mW (MAX.) Standby: 1650 W (MAX.) * Static operation * TTL compatible I/O * Three-state outputs * Single +5 V power supply * Package: 44-pin, 600-mil SOP DESCRIPTION The LH5324P00A is a 24M-bit mask-programmable ROM organized as 3,145,728 x 8 bits (Byte mode) or 1,572,864 x 16 bits (Word mode) that can be selected by a BYTE input pin. It is fabricated using silicon-gate CMOS process technology. 44-PIN SOP CMOS 24M (3M x 8/1.5M x 16) Mask-Programmable ROM PIN CONNECTIONS TOP VIEW NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE D0 D8 D1 D9 D2 D10 D3 D11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A20 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE GND D15/A-1 (LSB) D7 D14 D6 D13 D5 D12 D4 VCC 5324P00A-1 Figure 1. Pin Connections for SOP Package 5-307 LH5324P00A PRELIMINARY CMOS 24M Mask-Programmable ROM A20 44 A19 43 A18 2 A17 3 A16 34 A15 35 A14 36 ADDRESS BUFFER DATA SELECTOR/OUTPUT BUFFER A13 37 A12 38 A11 39 A10 40 A9 41 A8 42 A7 4 A6 5 A5 6 A4 A3 A2 7 8 9 ADDRESS DECODER MEMORY MATRIX (3,145,728 x 8) (1,572,864 x 16) 31 D15 29 D14 27 D13 25 D12 22 D11 20 D10 18 D9 16 D8 30 D7 28 D6 26 D5 24 D4 21 D3 19 D2 17 D1 COLUMN SELECTOR A1 10 A0 11 CE 12 CE BUFFER TIMING GENERATOR 15 D0 SENSE AMPLIFIER OE 14 OE BUFFER BYTE 33 BYTE/WORD SWITCHOVER CIRCUIT ADDRESS BUFFER 31 A-1 23 VCC 13 32 GND 5324P00A-2 Figure 2. LH5324P00A Block Diagram PIN DESCRIPTION SIGNAL PIN NAME NOTE SIGNAL PIN NAME NOTE A-1 - A20 D0 - D15 BYTE CE Address input Data output Byte/word mode switch Chip Enable input 1 1 1 OE VCC GND NC Output Enable input Power supply (+5 V) Ground No connection NOTE: 1. The D15 /A-1 pin becomes LSB address input (A-1) when the BYTE pin is set to be LOW in byte mode, and data output (D15) when set to be HIGH in word mode. 5-308 CMOS 24M Mask-Programmable ROM PRELIMINARY LH5324P00A TRUTH TABLE CE OE BYTE A-1 (D15) DATA OUTPUT D0 - D7 D8 - D15 ADDRESS INPUT LSB MSB SUPPLY CURRENT NOTE H L L L L X H L L L X X H L L X X - L H High-Z High-Z D0 - D7 D0 - D7 D8 - D15 High-Z High-Z D8 - D15 High-Z High-Z - - A0 A-1 A-1 - - A20 A20 A20 Standby (ISB) Operating (ICC ) Operating (ICC ) Operating (ICC ) Operating (ICC ) 1 1 NOTE: 1. X = H or L; High-Z = High-impedance When the address inputs become 'High' to both A19 and A20, the data outputs become `Unspecified' since the data does not exist in this address area. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT Supply voltage Input voltage Output voltage Operating temperature Storage temperature VCC VIN VOUT Topr Tstg - 0.3 to +7.0 - 0.3 to VCC + 0.3 - 0.3 to VCC + 0.3 0 to +70 - 65 to +150 V V V C C RECOMMENDED OPERATING CONDITIONS (TA = 0C to +70C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage VCC 4.5 5.0 5.5 V DC CHARACTERISTICS (VCC = 5 V 10%, TA = 0C to +70C) PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT NOTE Input `High' voltage Input `Low' voltage Output `High' voltage Output `Low' voltage Input leakage current Output leakage current Operating current Standby current Input capacitance Output capacitance V IH VIL VOH VOL | ILI | | ILO | ICC1 ICC2 ISB1 ISB2 CIN COUT I OH = -400 A I OL = 2.0 mA V IN = 0 V to VCC V OUT = 0 V to VCC t RC = 150 ns t RC = 1 s CE = VIH CE = VCC - 0.2 V f = 1 MHz T A = 25C 2.2 - 0.3 2.4 VCC + 0.3 0.8 0.4 10 10 80 70 3 300 10 10 V V V V A A mA mA A pF pF 1 2 NOTES: 1. CE/OE = VIH 2. VIN = VIH or VIL, CE = VIL, outputs open 5-309 LH5324P00A PRELIMINARY CMOS 24M Mask-Programmable ROM AC CHARACTERISTICS (VCC = 5 V 10%, TA = 0C to +70C) PARAMETER SYMBOL MIN. MAX. UNIT NOTE Read cycle time Address access time Chip enable access time Output enable delay time Output hold time CE to output in High-Z OE to output in High-Z tRC tAA tACE tOE tOH tCHZ tOHZ 120 120 120 60 5 50 50 ns ns ns ns ns ns ns 1 NOTE: 1. This is the time required for the outputs to become high-impedance. AC TEST CONDITIONS PARAMETER RATING Input voltage amplitude Input rise/fall time Input reference level Output reference level Output load condition 0.4 V to 2.6 V 10 ns 1.5 V 1.5 V 1TTL + 100 pF CAUTION To stabilize the power supply, it is recommended that a high-frequency bypass capacitor be connected between the VCC pin and the GND pin. 5-310 CMOS 24M Mask-Programmable ROM PRELIMINARY LH5324P00A tRC A-1 - A20 tAA (NOTE) CE tACE (NOTE) OE tOE (NOTE) tOHZ tOH tCHZ D0 - D7 NOTE: The output data becomes valid when the last intervals, tAA, tACE, or tOE, have concluded. DATA VALID 5324P00A-3 Figure 3. Byte Mode (BYTE = VIL) tRC A0 - A20 tAA (NOTE) CE tACE (NOTE) OE tOE (NOTE) tOHZ tOH tCHZ D0 - D15 NOTE: The output data becomes valid when the last intervals, tAA, tACE, or tOE, have concluded. DATA VALID 5324P00A-4 Figure 4. Word Mode (BYTE = VIH) 5-311 LH5324P00A PRELIMINARY CMOS 24M Mask-Programmable ROM PACKAGE DIAGRAM 44SOP (SOP044-P-0600) 1.27 [0.050] TYP. 0.50 [0.020] 0.30 [0.012] 44 23 13.40 [0.528] 13.00 [0.512] 16.40 [0.646] 15.60 [0.614] 14.40 [0.567] 1 28.40 [1.118] 28.00 [1.102] 22 SEE DETAIL 0.20 [0.008] 0.10 [0.004] 2.9 [0.114] 2.5 [0.098] DETAIL 0.15 [0.006] 1.275 [0.050] 2.9 [0.114] 2.5 [0.098] 0.25 [0.010] 0.05 [0.002] 1.275 [0.050] DIMENSIONS IN MM [INCHES] MAXIMUM LIMIT MINIMUM LIMIT 3.25 [0.128] 2.45 [0.096] 0.25 [0.010] 0.05 [0.002] 1.275 [0.050] 0 - 10 0.80 [0.031] 44SOP 44-pin, 600-mil SOP ORDERING INFORMATION LH5324P00A Device Type N Package 44-pin, 600-mil SOP (SOP044-P-0600) CMOS 24M (3M x 8 or 1.5M x 16) Mask-Programmable ROM Example: LH5324P00AN (CMOS 24M (3M x 8 or 1.5M x 16) Mask-Programmable ROM, 44-pin, 600-mil SOP) 5324P00A-5 5-312 |
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